| GSUa101005S1 |
<100> |
|
undoped, 10x10x0.5 mm ,1sp |
12064-03-8 |
견적문의 |
| GSUa50D045C1-US |
<100> |
|
undoped, 2"x0.45 mm ,1sp |
12064-03-8 |
견적문의 |
| GSUa50D05C2-US |
<100> |
|
undoped, 2"x0.5 mm two sides polished |
12064-03-8 |
견적문의 |
| GSSia50D05C1-US |
<100> |
|
Si doped, 2" x 0.450 mm wafer, 1sp |
12064-03-8 |
견적문의 |
| GSTea50D045C1-US |
<100> |
|
Te doped, 2"D x0.45mm wafer 1sp Carrier Concentration: 3.5x10^17 cm^-3 |
12064-03-8 |
견적문의 |
| GSTea50D045C1-1-US |
<100> |
|
Te doped, 2"D x0.45mm wafer 1sp,Carrier Concentration: (1-7)x10^17 cm^-3 |
12064-03-8 |
견적문의 |
| GSTa50D05C1-US |
<100> |
|
Te doped, 2"D x0.5mm wafer 1sp |
12064-03-8 |
견적문의 |
| GSZna50D045C1-US |
<100> |
|
Zn- doped, P-type, 2" dia x 0.45mm, 1sp |
12064-03-8 |
견적문의 |
| GSZna50D045C1-US |
<100> |
|
Zn- doped,, P-type, 2" dia x 0.45mm, 1sp |
12064-03-8 |
견적문의 |
